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| PH2729-150M Radar Pulsed Power Transistor--150 Watts 2.7-2.9 GHz, 100s Pulse, 10% Duty Features * * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1 Description M/A-COM's PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required. The flanged ceramic package provides for excellent thermal and hermetic properties, which when combined with M/A-COM's mature transistor fabrication technology results in the highest reliability available. Notes: (unless otherwise specified) 1. Tolerances are: inches .005" (millimeters 0.13mm) Absolute Maximum Rating at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation Storage Temperature Junction Temperature Symbol VCES VEBO IC PD TSTG TJ Rating 65 3.0 15.0 500 -65 to +200 200 Units V V A W C C Electrical Specifications at 25C= = Symbol BVCES ICES RTH(JC) POUT GP RL OD-S VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Overdrive Stability (Osc.) Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 40 mA VCE = 38 V VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 27.5 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz Min 65 150 8.3 38 10 Max 7.5 0.4 60 2:1 1.5:1 Units V mA C/W W dB % dB dBc - Specifications subject to change without notice. V 2.0 North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Radar Pulsed Power Transistor--150 Watts, 2.7-2.9 GHz, 100s Pulse, 10% Duty Test Fixture Matching Circuit Dimensions Circuit Dimensions1 Assembly View PH2729-150M 1. PCB Material Rogers 6010.5 .025" Thk. TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 Broadband Test Fixture Impedance F (GHz) 2.70 2.80 2.90 Z IF () 4.8 - j6.9 4.8 - j6.6 4.8 - j6.4 Z OF () 1.7 - j3.2 1.7 - j2.8 1.7 - j2.4 Typical Performance Curves Typical Power Transfer vs. Frequency 210 Typical Power Gain and Collector Efficiency 10 9.5 50 48 46 44 42 40 38 36 34 32 30 2.95 Power Gain (dB) 170 150 130 110 90 70 50 10 12 14 16 18 20 22 24 26 28 30 2.7 GHz 2.8 GHz 2.9 GHz 9 8.5 8 Power Gain (dB) 7.5 7 2.65 Nc (%) 2.7 2.75 2.8 2.85 2.9 Power Input (Wpk) Frequency (GHz) Specifications subject to change without notice. V 2.0 North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Collector Efficiency (%) Power Output (Wpk) 190 2 |
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